Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

• certain range of voltages, the current–voltage curve in that range would be essentially ohmic, and the conductivity of the system would depend on mobility and electron concentration [16][17]. If the electron-only device were, however, undoped and the injection at the contacts efficient, the current

• typical for organic semiconductors, therefore the absolute value of the mobility is of limited importance in this context. The simulated device is an electron-only device with a thickness of 100 nm. See Table 1 for the parameters used in the simulation. The first data set (line + filled squares) assumes